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MBRS3200T3G 二极管 ON
MBRS3200T3G
ON(安森美)
SMB
无铅环保型
贴片式
单件包装
100 A
0.86 V
3 A
1000 uA
相关产品
产品信息
MBRS3200T3G
肖特基二极管与整流器 3A 200V
This MBRS3200T3G device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
MBRS3200T3G Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage − 200 V
• 175°C Operating Junction Temperature
• Guard−Ring for Stress Protection
MBRS3200T3G Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings:
♦ Machine Model = A
♦ Human Body Model = 1C