深圳市中立信电子科技有限公司

MMBZ20VALT1G

ESD 抑制器/TVS 二极管 20V 225mW Dual Common Anode

Zener Diodes, 24 and  40 Watt Peak Power  SOT−23 Dual Common Anode Zeners

MMBZ20VALT1G Features

• SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration

• Standard Zener Breakdown Voltage Range − 5.6 V to 47 V

• Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform

• ESD Rating:

− Class 3B (> 16 kV) per the Human Body Model

− Class C (> 400 V) per the Machine Model

• ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge

• Maximum Clamping Voltage @ Peak Pulse Current

• Low Leakage < 5.0 A

• Flammability Rating UL 94 V−0

• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MMBZ20VALT1G Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel

Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.

These MMBZ20VALT1G dual monolithic silicon Zener diodes are designed for  applications requiring transient overvoltage protection capability. They  are intended for use in voltage and ESD sensitive equipment such as  computers, printers, business machines, communication systems,  medical equipment and other applications. Their dual junction common  anode design protects two separate lines using only one package. These  devices are ideal for situations where board space is at a premium.