深圳市中立信电子科技有限公司

TIP35C

双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur Complementary power transistors

Features

■ Low collector-emitter saturation voltage

■ Complementary NPN - PNP transistors

Applications

■ General purpose

■ Audio amplifier

Description

The devices are manufactured in planar

technology with “base island” layout. The

resulting transistors show exceptional high gain

performance coupled with very low saturation

voltage.

Absolute maximum ratings

Symbol Parameter Value Unit

NPN TIP35C

PNP TIP36C

VCBO Collector-base voltage (IE = 0) 100 V

VCEO Collector-emitter voltage (IB = 0) 100 V

VEBO Emitter-base voltage (IC = 0) 5 V

IC Collector current 25 A

ICM Collector peak current (tP < 5 ms) 50 A

IB Base current 5 A

Ptot Total dissipation at Tcase = 25 °C 125 W

Tstg Storage temperature -65 to 150 °C

TJ Max. operating junction temperature 150 °C

型号: TIP35C 

制造商: STMicroelectronics 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: Through Hole 

封装 / 箱体: TO-247-3 

晶体管极性: NPN 

配置: Single 

集电极—发射极电压 VCEO: 100 V 

集电极—基极电压 VCBO: 100 V 

发射极 - 基极电压 VEBO: 5 V 

集电极—射极饱和电压: 1.8 V 

直流电集电极电流: 25 A 

增益带宽产品fT: 3 MHz 

工作温度: - 65 C 

工作温度: + 150 C 

系列: TIP35C 

高度: 20.15 mm (Max)  

长度: 15.75 mm (Max)  

宽度: 5.15 mm (Max)  

商标: STMicroelectronics  

集电极连续电流: 25 A  

Pd-功率耗散: 125 W  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 600  

子类别: Transistors  

单位重量: 6.500 g