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深圳市中立信电子科技有限公司
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产品分类
- 超高频/高频三极管(18)
- 复合(达林顿)三极管(2)
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- 气体放电管(1)
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产品信息
| 功率：7W | 类型：通信IC | 型号：RA07M4047M |
| 批号：2013+ | 用途：功放 | 品牌：Mitsubishi/三菱 |
| 是否提供加工定制：否 | 封装：H46S |
RA07M4047M是7-watt RF的MOSFET放大器便携式收音机模块7.2-volt的工作在400-到470-MHz范围.电池可以直接连接到漏极增强型MOSFET晶体管.如果没有门电压(VGG进入=0V),只有一小漏电流排水和输入信号衰减的RF高达60 dB.输出功率和漏电流增加门极电压上升.与周围2.5V（），输出功率和电压门漏电流大幅增加.额定输出功率变在3V（典型值）和3.5V（）提供.在VGG=3.5V,的典型栅极电流1 mA.该模块是专为非线性调频调制，但可能也可用于线性调制通过设置静态漏电流随栅极电压和输出功率控制与输入功率.
The RA07M4047M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to 470-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
• Enhancement-Mode MOSFET Transistors(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output powerwith the input power RoHS COMPLIANCE
• RA07M4047M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
深圳市华誉伟业电子有限公司是国内三菱射频电子元器件供应商，三菱射频产品广泛应用用于移动通信基站、直放站、卫星通信、有线电视、雷达、无线本地环等领域。积极向国内生产和科研单位推荐新产品：日本三菱公司生产的系列射频功率放大模块、系列射频场效应三极管。多年以来已为国内众多的生产厂家、科研院所、大专院校、国家重要单位维修部门的生产、维修、研制开发新品、教学实验等提供了准确、快捷、方便的配套供货服务。在经营运作上,我公司批发、零售兼营，可向用户长期保证货源，并保证供货品种的技术指标满足相关的国际检测标准。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射频功率放大模块）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司长期经营日本MITSUBISHI三菱全系列射频功率放大模块，保证全新原装，现货，批号无铅环保，假一罚十。深圳、香港公司备有大量现货库存，可提供样品，现特价热卖中。