深圳市中立信电子科技有限公司

BGA2869,115

射频放大器 GP AMPLIFIER MMIC wideband amplifier

Product profile BGA2869,115

1.1 General description

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal

matching circuit in a 6-pin SOT363 plastic SMD package.

1.2 Features and benefits BGA2869,115

 Internally matched to 50 

 A gain of 31.7 dB at 950 MHz

 Output power at 1 dB gain compression = 10 dBm at 950 MHz

 Supply current = 24.0 mA at a supply voltage of 5.0 V

 Reverse isolation > 39 dB up to 2150 MHz

 Good linearity with low second order and third order products

 Noise figure = 3.1 dB at 950 MHz

 Unconditionally stable (K > 1)

 No output inductor required

1.3 Applications

 LNB IF amplifiers

 General purpose low noise wideband amplifier for frequencies between

DC and 2.2 GHz

型号: BGA2869,115

产品种类: 射频放大器 

RoHS:  无铅环保  

安装风格: SMD/SMT 

封装 / 箱体: SOT-363-6 

工作频率: 0 Hz to 2.2 GHz 

P1dB - 压缩点: 10 dBm 

增益: 31.7 dB 

NF—噪声系数: 3.1 dB 

OIP3 - 三阶截点: 19 dBm 

封装: Cut Tape 

封装: Reel 

商标: NXP Semiconductors  

产品类型: RF Amplifier  

工厂包装数量: 3000  

子类别: Wireless & RF Integrated Circuits  

单位重量: 5.464 mg