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MBRS2H100T3G 二极管 ON
MBRS2H100T3G
ON（安森美）
SMB
无铅环保型
贴片式
卷带编带包装
0.79 V
2 A
130 A
8 uA
相关产品
产品信息
MBRS2H100T3G
肖特基二极管与整流器 SCHOTTKY 2A 100V
This MBRS2H100T3G device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
MBRS2H100T3G Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
• These Devices are Pb−Free and are RoHS Compliant
• Device Meets MSL1 Requirements
MBRS2H100T3G Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Overvoltage Protection
• Low Forward Voltage Drop
• NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
