深圳市中立信电子科技有限公司

LX5518LQ-TR

InGaP HBT 2.4 – 2.5 GHz Power Amplifier 

DESCRIPTION LX5518LQ-TR

The LX5518 is a high gain and high power amplifier optimized for 802.11b/g/n applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching, and output pre-matching.

The device is manufactured with an  InGaP/GaAs Heterojunction Bipolar  Transistor (HBT) IC process  (MOCVD). It operates with a single  positive voltage supply of 3-5V, and  provides a power gain of 30dB and an  output power of +26dBm at 5V for 3%  EVM in the 2.4-2.5GHz.

LX5518 also features an on-chip  power detector at the output port of  the PA to help reduce BOM cost and  PCB space for implementation of  power control in a typical wireless  system.

The LX5518 is available in a 16-  pin 3mm x 3mm quad flat no lead  package (QFN 3×3-16L). The  compact footprint, low profile, and  excellent thermal capability make the  LX5518 an ideal solution for  802.11b/g/n applications.

KEY FEATURES LX5518LQ-TR

ƒ Advanced InGaP HBT

ƒ 2.4-2.5GHz Operation

ƒ Single-Polarity 3-5V Supply

ƒ Power Gain ~ 30 dB

ƒ 26dBm @3%EVM,802.11g/5V

ƒ 24dBm @3.5%EVM,80211g/3.3V

ƒ 28dBm @CCK,802.11b/5V

ƒ 27dBm @CCK,802.11b/3.3V

ƒ 24.5% Efficiency @28dBm/5V

ƒ Complete On-Chip Input Match

ƒ Simple Output Match for Optimal EVM

ƒ Temperature-Compensated OnChip

Output Power Detector with

Wide Dynamic Range

ƒ Small Footprint: 3x3mm2

ƒ Low Profile: 0.9mm

APPLICATIONS LX5518LQ-TR

ƒ 802.11b/g/n