- 非IC关键词
深圳市中立信电子科技有限公司
- 卖家积分：
营业执照：已审核经营模式：贸易/代理/分销所在地区：广东 深圳企业网站：
http://www.zlxele.com
收藏本公司 人气：831320
企业档案
- 相关证件：
- 会员类型：
- 会员年限：16年
- 叶先生
- 电话：0755-23956688
- 手机：13410226883
- 王先生
- 电话：0755-23956688
- 阿库IM：
- 地址：深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
- 传真：0755-23956688
- E-mail：Lee@zlxele.com
您的当前位置：深圳市中立信电子科技有限公司 > 元器件产品
产品信息
| 功率：7W | 类型：其他IC | 型号：RA07M3340M |
| 批号：2013+ | 用途：功放 | 品牌：Mitsubishi/三菱 |
| 是否提供加工定制：否 | 封装：H46S | ? |
RA07M3340M是7-watt RF的MOSFET放大器模块for 7.2-volt，在330-工作的移动收音机400-MHz范围.电池可以直接连接到漏极增强型MOSFET晶体管.如果没有门电压(VGG进排水=0V),只是一个很小的泄漏电流与输入信号衰减的RF高达60 dB.输出功率作为栅极和漏极电压增加电流增加.随着栅极电压约2.5V（），输出功率和漏目前的大幅增加.额定输出功率变在3V（典型值）和3.5V（）提供.在VGG=3.5V,的典型栅极电流1 mA.该模是专为非线性调频调制，但可能也可用于线性调制通过设置静态漏电流随栅极电压和输出功率控制输入功率.
特征
?增强型MOSFET晶体管(IDD?0@ VDD=7.2V, VGG=0V)
? Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
?ηT>40% @ Pout=6.5W (VGG控制），VDD=7.2V, Pin=50mW
?宽带频率范围：330-400MHz
?低功耗控制电流IGG=1mA (typ)在VGG=3.5V
?模块尺寸：30 x 10 x 5.4 mm
?线性操作有可能通过设置静态漏电流同门电压和输出功率的控制输入功率
RA07M3340M： Silicon RF Power Semiconductors RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
? Enhancement-Mode MOSFET Transistors (IDD?0 @ VDD=7.2V, VGG=0V)
? Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
? ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
? Broadband Frequency Range: 330-400MHz
? Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
? Module Size: 30 x 10 x 5.4 mm
? Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
? RA07M3340M-101 is a RoHS compliant products.
? RoHS compliance is indicate by the letter “G” after the Lot Marking.
? This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
? Enhancement-Mode MOSFET Transistors (IDD?0 @ VDD=7.2V, VGG=0V)
? Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
? ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
? Broadband Frequency Range: 330-400MHz
? Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
? Module Size: 30 x 10 x 5.4 mm
? Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
? RA07M3340M-101 is a RoHS compliant products.
? RoHS compliance is indicate by the letter “G” after the Lot Marking.
? This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER： RA07M3340M-101
SUPPLY FORM： Antistatic tray,50 modules/tray
深圳市华誉伟业电子有限公司是国内三菱射频电子元器件供应商，三菱射频产品广泛应用用于移动通信基站、直放站、卫星通信、有线电视、雷达、无线本地环等领域。积极向国内生产和科研单位推荐新产品：日本三菱公司生产的系列射频功率放大模块、系列射频场效应三极管。多年以来已为国内众多的生产厂家、科研院所、大专院校、国家重要单位维修部门的生产、维修、研制开发新品、教学实验等提供了准确、快捷、方便的配套供货服务。在经营运作上,我公司批发、零售兼营，可向用户长期保证货源，并保证供货品种的技术指标满足相关的国际检测标准。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射频功率放大模块）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司长期经营日本MITSUBISHI三菱全系列射频功率放大模块，保证全新原装，现货，批号无铅环保，假一罚十。深圳、香港公司备有大量现货库存，可提供样品，现特价热卖中。