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产品信息
| 功率：35W | 类型：其他IC | 型号：RA35H1516M |
| 批号：2013+ | 用途：功放 | 品牌：Mitsubishi/三菱 |
| 是否提供加工定制：否 | 封装：H2S |
RA35H1516M是40-watt RF的MOSFET放大器模块12.5-volt移动电台在向工作在154-162-MHz范围.电池可以直接连接到漏极增强型MOSFET晶体管.如果没有门电压(VGG进入=0V),只有一小漏电流排水和输入信号衰减的RF高达60 dB.输出功率和漏电流增加门极电压上升.与周围4V（），输出功率和电压门漏电流大幅增加.额定输出功率变在4.5V（典型值）和5V（）提供.在VGG=5V,的典型栅极电流1 mA.该模块是专为非线性调频调制，但可能也可用于线性调制通过设置静态漏电流随栅极电压和输出功率控制输入功率.
特征
•增强型MOSFET晶体管(IDD≅0@ VDD=12.5V, VGG=0V)
•
Pout>40W,ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
•低功耗控制电流IGG=1mA (typ)在VGG=5V
•模块尺寸：66 x 21 x
9.88 mm
•线性操作有可能通过设置静态漏电流随栅极电压和输出功率控制与输入功率
RA35H1516M：Silicon RF Power
Modules RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE
RADIO
DESCRIPTION
The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage(VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.The nominal output power becomes available at 4.5V (typical) and 5V(maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage(VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.The nominal output power becomes available at 4.5V (typical) and 5V(maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors(IDD?0 @ VDD=12.5V, VGG=0V)
• Pout>40W, ?T>50% @ VDD=12.5V, VGG=5V, Pin=50mW
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA35H1516M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
• Enhancement-Mode MOSFET Transistors(IDD?0 @ VDD=12.5V, VGG=0V)
• Pout>40W, ?T>50% @ VDD=12.5V, VGG=5V, Pin=50mW
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA35H1516M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING
INFORMATION:
ORDER
NUMBER：RA35H1516M-101
SUPPLY
FORM：Antistatic tray,10 modules/tray