深圳市中立信电子科技有限公司

NVC3S5A51PLZT1G

Power MOSFET  60V, 250mΩ, 1.8A, P-Channel

MOSFET PCH 1.8A 60V 4V DRIVE

Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.

NVC3S5A51PLZT1G Features

 4V drive

 High ESD protection

 Low On-Resistance

 AEC-Q101 qualified and PPAP capable

 Pb-Free, Halogen Free and RoHS compliance

NVC3S5A51PLZT1G Typical Applications

 Reverse Battery Protection

 High Side Load Switch

 Automotive Body Controllers

NVC3S5A51PLZT1G ELECTRICAL CHARACTERISTICS at Ta  25C (Note 4)

Parameter Symbol Conditions

Value

Unit

min typ max

Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V

Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A

Gate to Source Leakage Current IGSS VGS=16V, VDS=0V 10 A

Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 2.6 V

Forward Transconductance gFS VDS=10V, ID=1A 2.7 S

Static Drain to Source On-State

Resistance RDS(on)

ID=1A, VGS=10V 190 250 m

ID=0.5A, VGS=4.5V 235 330 m

ID=0.5A, VGS=4V 250 350 m

Input Capacitance Ciss

VDS=20V, f=1MHz

 262 pF

Output Capacitance Coss 29 pF

Reverse Transfer Capacitance Crss 19 pF

Turn-ON Delay Time td(on)

See Fig.1

 5.1 ns

Rise Time tr 5.4 ns

Turn-OFF Delay Time td(off) 34 ns

Fall Time tf 19 ns

Total Gate Charge Qg

VDS=30V, VGS=10V, ID=1.8A

 6.0 nC

Gate to Source Charge Qgs 0.83 nC

Gate to Drain “Miller” Charge Qgd 1.3 nC

Forward Diode Voltage VSD IS=1.8A, VGS=0V 0.82 1.2 V