深圳市中立信电子科技有限公司

PSMN2R6-40YS,115

MOSFET N-CH 40V 2.8 mOhm Standard

N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET

General description PSMN2R6-40YS,115

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features and benefits

„ Advanced TrenchMOS provides low

RDSon and low gate charge

„ High efficiency gains in switching

power converters

„ Improved mechanical and thermal

characteristics

„ LFPAK provides maximum power

density in a Power SO8 package

Applications PSMN2R6-40YS,115

„ DC-to-DC convertors

„ Lithium-ion battery protection

„ Load switching

„ Motor control

„ Server power supplies

Quick reference data PSMN2R6-40YS,115

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V

ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 100 A

Ptot total power dissipation

Tmb = 25 °C; see Figure 2 - - 131 W

Tj junction temperature -55 - 175 °C

Source-drain diode

IS source current Tmb = 25 °C - 100 A

ISM peak source current tp ≤ 10 μs; pulsed; Tmb = 25 °C - 651 A