深圳市中立信电子科技有限公司

TK6A65D(STA4,Q,M)

MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm Silicon N Channel MOS Type (π-MOS VII) 

Switching Regulator Applications TK6A65D(STA4,Q,M)

• Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)

• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 

Absolute Maximum Ratings (Ta = 25°C) TK6A65D(STA4,Q,M)

Characteristics Symbol Rating Unit  Drain-source voltage VDSS 650 V  Gate-source voltage VGSS ±30 V  DC (Note 1) ID 6  Drain current  Pulse (Note 1) IDP 24  A  Drain power dissipation (Tc = 25°C) PD 45 W  Single pulse avalanche energy   (Note 2) EAS 281 mJ  Avalanche current IAR 6 A  Repetitive avalanche energy (Note 3) EAR 4.5 mJ  Channel temperature Tch 150 °C  Storage temperature range Tstg −55 to 150 °C

Source-Drain Ratings and Characteristics (Ta = 25°C) TK6A65D(STA4,Q,M)

Characteristics Symbol Test Condition Min Typ. Max Unit  Continuous drain reverse current   (Note 1) IDR ⎯ ⎯ ⎯ 6 A  Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A  Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V  Reverse recovery time trr ⎯ 1300 ⎯ ns  Reverse recovery charge Qrr  IDR = 6 A, VGS = 0 V,  dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC