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TK9A90E,S4X

MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS Silicon N-Channel MOS (¦Ð-MOSªÔ)

Dynamic Characteristics (Ta = 25 ª­ unless otherwise specified)  TK9A90E,S4X

Characteristics  Input capacitance  Reverse transfer capacitance  Output capacitance  Gate resistance  Switching time (rise time)  Switching time (turn-on time)  Switching time (fall time)  Switching time (turn-off time)  MOSFET dv/dt ruggedness  Symbol  Ciss  Crss  Coss  rg  tr  ton  tf  toff  dv/dt  Test Condition  VDS = 25 V, VGS = 0 V, f = 1 MHz  VDS = OPEN, f = 1 MHz  See Fig. 6.2.1.  VDD = 0 to 400 V, ID = 9 A  Min  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  20  Typ.  2000  15  150  3.5  40  80  35  140  ªÆ  Max  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  Unit  pF  Ω  ns  V/ns

Absolute Maximum Ratings (Note) (Ta = 25 ª­ unless otherwise specified)  TK9A90E,S4X

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  Isolation voltage (RMS)  Mounting torque  (Tc = 25ª­)  (Note 1)  (Note 1)  (Note 2)  (Note 1)  (Note 1)  Symbol  VDSS  VGSS  ID  IDP  PD  EAS  IAR  IDR  IDRP  Tch  Tstg  VISO(RMS)  TOR  Rating  900  ¡À30  9  27  50  454  9  9  27  150  -55 to 150  2000  0.6  Unit  V  A  W  mJ  A  ª­  V  Nª®m

Static Characteristics (Ta = 25 ª­ unless otherwise specified)  TK9A90E,S4X

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  Symbol  IGSS  IDSS  V(BR)DSS  Vth  RDS(ON)  Test Condition  VGS = ¡À30 V, VDS = 0 V  VDS = 720 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  VDS = 10 V, ID = 0.9 mA  VGS = 10 V, ID = 4.5 A  Min  ªÆ  ªÆ  900  2.5  ªÆ  Typ.  ªÆ  ªÆ  ªÆ  ªÆ  1.0  Max  ¡À1  10  ªÆ  4.0  1.3  Unit  ¦ÌA  V  Ω