- 非IC关键词
深圳市中立信电子科技有限公司
- 卖家积分：
营业执照：已审核经营模式：贸易/代理/分销所在地区：广东 深圳企业网站：
http://www.zlxele.com
收藏本公司 人气：700568
企业档案
- 相关证件：
- 会员类型：
- 会员年限：16年
- 叶先生
- 电话：0755-23956688
- 手机：13410226883
- 王先生
- 电话：0755-23956688
- 阿库IM：
- 地址：深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
- 传真：0755-23956688
- E-mail：Lee@zlxele.com
产品分类
- 超高频/高频三极管(18)
- 复合(达林顿)三极管(2)
- 其他三极管(55)
- 单向可控硅(晶闸管)(2)
- 双向可控硅(晶闸管)(16)
- 可控硅(晶闸管)模块(10)
- 其他电位器(9)
- 模块电源/电源模块(1)
- 其他微调/预调电位器(1)
- 背板连接器(1)
- 气体放电管(1)
- 其他继电器(1)
- 红外线发射管(1)
- 光电光耦合器(光耦)(11)
- LED器件(54)
- 其它LED相关产品（服务）(1)
- 整体式PLC(1)
TPH12008NH,L1Q MOSFET Toshiba
TPH12008NH,L1Q
TOSHIBA（东芝）
SOP
无铅环保型
贴片式
卷带编带包装
: 80 V
: 44 A
: 10.1 mOhms
: 4 V
相关产品
产品信息
TPH12008NH,L1Q
MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W
Applications TPH12008NH,L1Q
• DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
Features TPH12008NH,L1Q
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 8.1 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 μA (max) (VDS = 80 V)
(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TPH12008NH,L1Q
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25) (t = 1 ms) (Tc = 25) (t = 10 s) (t = 10 s) (Note 1), (Note 2) (Note 1) (Note 1) (Note 3) (Note 4) (Note 5) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 80 ±20 44 24 97 48 2.8 1.6 58 24 150 -55 to 150 Unit V A W W W mJ A
Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±20 V, VDS = 0 V VDS = 80 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.3 mA VGS = 10 V, ID = 12 A Min 80 60 2.0 Typ. 10.1 Max ±0.1 10 4.0 12.3 Unit μA V mΩ
