深圳市中立信电子科技有限公司

产品型号 品牌 元器件名称 Technology Frequency Range P1dB (W) P3dB (W) Gain (dB) Pout (W) Test signal 封装 Minimum Frequency (MHz) Maximum Frequency (MHz) MRF8P26080HR5 NXP Semiconductor 射频功率晶体管 LDMOS 2500 2700 54 83 15 14 W-CDMA NI-780 MRF8P26080HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 2500 2700 54 83 15 14 W-CDMA NI-780 MRF8P29300HR6 NXP Semiconductor 射频功率晶体管 LDMOS 2700 2900 320 13.3 320 Pulsed NI-1230 MRF8P29300HSR6 NXP Semiconductor 射频功率晶体管 LDMOS 2700 2900 320 13.3 320 Pulsed NI-1230 MRF8P8300HR5 NXP Semiconductor 射频功率晶体管 LDMOS 790 820 340 20.9 96 W-CDMA NI-1230 MRF8P8300HR6 NXP Semiconductor 射频功率晶体管 LDMOS 790 820 340 20.9 96 W-CDMA NI-1230 MRF8P8300HSR6 NXP Semiconductor 射频功率晶体管 LDMOS 790 820 340 20.9 96 W-CDMA NI-1230 MRF8P9040GNR1 NXP Semiconductor 射频功率晶体管 LDMOS 728 960 42 19.1 4 W-CDMA TO-270 MRF8P9040NR1 NXP Semiconductor 射频功率晶体管 LDMOS 728 960 42 19.1 4 W-CDMA TO-270 MRF8P9210NR3 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 193 290 16.7 63 W-CDMA OM-780 MRF8P9300HR5 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 326 19.4 100 W-CDMA NI-1230 MRF8P9300HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 326 19.4 100 W-CDMA NI-1230 MRF8P9300HSR6 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 326 19.4 100 W-CDMA NI-1230S MRF8S18120HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 1805 1880 120 18.2 72 CW NI-780 MRF8S18210WGHSR3 NXP Semiconductor 射频功率晶体管 LDMOS 1805 1995 210 17.8 50 W-CDMA NI-880XS-2 Gull MRF8S18210WHSR3 NXP Semiconductor 射频功率晶体管 LDMOS 1805 1995 210 17.8 50 W-CDMA NI-880XS-2 MRF8S18260HSR6 NXP Semiconductor 射频功率晶体管 LDMOS 1805 1880 260 17.9 74 W-CDMA NI-1230 MRF8S19260HR5 NXP Semiconductor 射频功率晶体管 LDMOS 1930 1990 245 18.2 74 W-CDMA NI-1230 MRF8S21100HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 100 18.3 24 CW NI-780 MRF8S21120HR5 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 107 17.6 28 W-CDMA NI-780 MRF8S21120HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 107 17.6 28 W-CDMA NI-780 MRF8S21120HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 107 17.6 28 W-CDMA NI-780 MRF8S21172HR3 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 132 17.5 42 W-CDMA NI-780 MRF8S21172HR5 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 132 17.5 42 W-CDMA NI-780 MRF8S21172HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 132 17.5 42 W-CDMA NI-780 MRF8S21172HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 132 17.5 42 W-CDMA NI-780S MRF8S21200HR6 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 178 18.1 48 W-CDMA NI-1230 MRF8S21200HSR6 NXP Semiconductor 射频功率晶体管 LDMOS 2110 2170 178 18.1 48 W-CDMA NI-1230 MRF8S26060HR3 NXP Semiconductor 射频功率晶体管 LDMOS 2620 2690 60 16.3 15.5 W-CDMA NI-400 MRF8S7120NR3 NXP Semiconductor 射频功率晶体管 LDMOS 728 768 125 19.2 32 W-CDMA OM-780 MRF8S7170NR3 NXP Semiconductor 射频功率晶体管 LDMOS 618 803 182 19.5 50 W-CDMA OM-780 MRF8S7235NR3 NXP Semiconductor 射频功率晶体管 MOSFET 728 768 260 20.2 63 W-CDMA OM-780-2 MRF8S8260HR5 NXP Semiconductor 射频功率晶体管 LDMOS 850 895 260 21.1 70 W-CDMA NI-880 MRF8S8260HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 850 895 260 21.1 70 W-CDMA NI-880 MRF8S9100HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 108 19.3 72 CW NI-780 MRF8S9102NR3 NXP Semiconductor 射频功率晶体管 LDMOS 865 960 100 23.1 28 W-CDMA OM-780 MRF8S9120NR3 NXP Semiconductor 射频功率晶体管 LDMOS 865 960 120 19.8 33 W-CDMA OM-780 MRF8S9170NR3 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 177 19.3 50 W-CDMA OM-780 MRF8S9200NR3 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 200 19.9 58 CDMA OM-780-2 MRF8S9202GNR3 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 18.9 58 W-CDMA OM-780-2 MRF8S9220HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 220 19.4 65 W-CDMA NI-780 MRF8S9232NR3 NXP Semiconductor 射频功率晶体管 LDMOS 865 960 230 18.1 63 W-CDMA OM-780 MRF8S9260HR5 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 260 18.6 75 W-CDMA NI-880 MRF8S9260HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 260 18.6 75 W-CDMA NI-880 MRF8S9260HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 260 18.6 75 W-CDMA NI-880 MRF8VP13350GNR3 NXP Semiconductor 射频功率晶体管 LDMOS 700 1300 20.7 355 CW OM-780G-4L MRF8VP13350NR3 NXP Semiconductor 射频功率晶体管 LDMOS 700 1300 20.7 355 CW OM-780-4L MRFE6P3300HR3 NXP Semiconductor 射频功率晶体管 LDMOS 470 860 300 20.4 270 2-Tone NI-860 MRFE6S8046GNR1 NXP Semiconductor 射频功率晶体管 LDMOS 864 894 47 19.8 35.5 CW TO-270 WB-4 Gull MRFE6S9045NR1 NXP Semiconductor 射频功率晶体管 LDMOS 880 960 45 22.1 10 CDMA TO-270 MRFE6S9046GNR1 NXP Semiconductor 射频功率晶体管 LDMOS 920 960 45 19 35.5 CW TO-270 WB-4 Gull MRFE6S9060NR1 NXP Semiconductor 射频功率晶体管 LDMOS 880 960 60 21.1 14 CDMA TO-270 MRFE6S9125NBR1 NXP Semiconductor 射频功率晶体管 LDMOS 800 960 125 20.2 27 CDMA TO-272 MRFE6S9125NR1 NXP Semiconductor 射频功率晶体管 LDMOS 800 960 125 20.2 27 CDMA TO-270 MRFE6S9130HR3 NXP Semiconductor 射频功率晶体管 LDMOS 880 960 130 19.2 27 CDMA NI-780 MRFE6S9160HSR3 NXP Semiconductor 射频功率晶体管 LDMOS 880 960 160 21 35 CDMA NI-780 MRFE6VP100HR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 2000 123 26 100 CW NI-780 MRFE6VP100HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 2000 123 26 100 CW NI-780S MRFE6VP5150GNR1 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 159 26.1 150 Pulsed TO-270WBG-4 MRFE6VP5150NR1 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 159 26.1 150 Pulsed TO-270WB-4 MRFE6VP5300GNR1 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 313 25 300 CW TO-270WBG-4 MRFE6VP5300NR1 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 313 25 300 CW TO-270WB-4 MRFE6VP5600HR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 600 24.6 600 CW NI-1230 MRFE6VP5600HR6 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 600 24.6 600 CW NI-1230 MRFE6VP5600HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 600 24.6 600 CW NI-1230 MRFE6VP61K25GNR6 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 1250 1518 23 Pulsed OM-1230G-4L MRFE6VP61K25GSR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 21.5 1250 Pulsed NI-1230GS-4L MRFE6VP61K25HR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 1250 22.9 1250 CW NI-1230 MRFE6VP61K25HR6 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 1250 22.9 1250 CW NI-1230 MRFE6VP61K25HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 1250 22.9 1250 CW NI-1230 MRFE6VP61K25HSR6 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 1250 22.9 1500 CW NI-1230 MRFE6VP61K25NR6 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 1295 1518 23 1250 Pulsed OM-1230-4L MRFE6VP6300GSR5 NXP Semiconductor 射频功率晶体管 MOSFET 600 25 300 CW MRFE6VP6300HR3 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 300 25 300 Pulsed NI-780 MRFE6VP6300HR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 300 25 300 Pulsed NI-780 MRFE6VP6300HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 300 25 300 Pulsed NI-780S MRFE6VP6600GNR3 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 682 771 24.7 600 Pulsed OM-780G-4L MRFE6VP6600NR3 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 600 682 771 24.7 600 Pulsed OM-780-4L MRFE6VP8600HR5 NXP Semiconductor 射频功率晶体管 LDMOS 470 860 600 19.3 125 DVB-T NI-1230 MRFE6VP8600HSR5 NXP Semiconductor 射频功率晶体管 LDMOS 470 860 600 19.3 125 DVB-T NI-1230 MRFE6VS25GNR1 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 2000 27.8 25.4 25 Pulsed TO-270 MRFE6VS25LR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 2000 28.7 26 25 CW NI-360 MRFE6VS25NR1 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 2000 27.8 25.4 25 Pulsed TO-270 MRFE8VP8600HR5 NXP Semiconductor 射频功率晶体管 LDMOS 470 860 799 917 21 140 DVB-T NI-1230H-4S MRFG35003N6AT1 NXP Semiconductor 射频功率晶体管 GaAs 0 6000 3 10 0.45 W-CDMA Case 466 MRFG35010ANT1 NXP Semiconductor 射频功率晶体管 GaAs 0 6000 9 10 1 W-CDMA Case 466 MRFX1K80HR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 470 27.8 1800 CW NI-1230H-4S MW6S004NT1 NXP Semiconductor 射频功率晶体管 LDMOS 1 2000 4 18 4 2-Tone PLD 1.5 MW6S010GNR1 NXP Semiconductor 射频功率晶体管 LDMOS 450 1500 10 18 100 2-Tone TO-270 MW6S010NR1 NXP Semiconductor 射频功率晶体管 LDMOS 450 1500 10 18 100 2-Tone TO-270 PAFT31150NR5 NXP Semiconductor 射频功率晶体管 LDMOS 2700 3100 PRF13750HR9 NXP Semiconductor 射频功率晶体管 LDMOS 700 1300 19.3 750 CW NI-1230H-4S PRFE6VP61K25NR6 NXP Semiconductor 射频功率晶体管 LDMOS PRFX1K80HR5 NXP Semiconductor 射频功率晶体管 LDMOS 1.8 470 27.8 1800 CW NI-1230H-4S SRF1257280GSR5 NXP Semiconductor 射频功率晶体管 LDMOS SRF1287081GR3 NXP Semiconductor 射频功率晶体管 LDMOS