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BFU768F,115 射频管 NXP
BFU768F,115
NXP(恩智浦)
SOT343F
无铅环保型
贴片式
卷带编带包装
NPN型
3000
6.665 mg
- 40 ℃
125 ℃
产品信息
BFU768F,115
射频(RF)双极晶体管 4-pin Dual-Emitter Microwave Transistor
NPN wideband silicon germanium RF transistor
General description BFU768F
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
Features and benefits BFU768F
Low noise high linearity RF transistor
110 GHz fT silicon germanium technology
Optimal linearity for low current and high gain
Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
Low current: 10.8 mA
Noise figure < 1.2 dB
Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
Very fast on/off times
Unconditionally stable
Higher IP3, higher gain or lower noise figure possible with different application circuits
Applications BFU768F
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
ZigBee
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.