深圳市中立信电子科技有限公司

AFT05MS003NT1

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V

Designed for handheld two--way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.

Features AFT05MS003NT1

 Characterized for Operation from 1.8 to 941 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band

 Exceptional Thermal Performance

 Extreme Ruggedness

Typical Applications AFT05MS003NT1

 Output Stage VHF Band Handheld Radio

 Output Stage UHF Band Handheld Radio

 Output Stage for 700–900 MHz Handheld Radio

 Smart Metering

 Driver for 1.8–941 MHz Applications

型号: AFT05MS003NT1

制造商: NXP 

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 

RoHS:  无铅环保  

晶体管极性: N-Channel 

Id-连续漏极电流: 2.6 A 

Vds-漏源极击穿电压: - 500 mV, 30 V 

技术: Si 

增益: 20.8 dB 

输出功率: 3.2 W 

工作温度: - 40 ℃ 

工作温度: + 150 ℃ 

安装风格: SMD/SMT 

封装 / 箱体: SOT-89-3 

封装: Cut Tape 

封装: Reel 

工作频率: 1.8 MHz to 941 MHz  

类型: RF Power MOSFET  

商标: NXP / Freescale  

通道数量: 1 Channel  

Pd-功率耗散: 30.5 W  

产品类型: RF MOSFET Transistors  

工厂包装数量: 1000  

子类别: MOSFETs  

Vgs - 栅极-源极电压: - 6 V, 12 V  

Vgs th-栅源极阈值电压: 2.2 V  

单位重量: 50.800 mg