深圳市中立信电子科技有限公司

STP21N90K5

MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5

0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5  Power MOSFET in a D2PAK

Features STP21N90K5

■ TO-220 worldwide best RDS(on)

■ Worldwide best FOM (figure of merit)

■ Ultra low gate charge

■ 100% avalanche tested

■ Zener-protected

Applications STP21N90K5

■ Switching applications

Description STP21N90K5

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.

On/off states  Symbol Parameter Test conditions Min. Typ. Max. Unit  V(BR)DSS  Drain-source breakdown  voltage (VGS= 0) ID = 1 mA 900 V  IDSS  Zero gate voltage drain  current (VGS = 0)  VDS = 900 V  VDS = 900 V, Tc=125 °C  1  50  μA  μA  IGSS  Gate body leakage current  (VDS = 0) VGS = ± 20 V ±10 μA  VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA 3 45V  RDS(on)  Static drain-source on  resistance VGS = 10 V, ID= 9 A 0.25 0.299 Ω