深圳市中立信电子科技有限公司

AFT05MS004NT1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941MHz, 4W, 7.5V                                   

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

Designed AFT05MS004NT1 for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.

Narrowband Performance (7.5 Vdc, TA = 25C, CW)

Features AFT05MS004NT1

 Characterized for Operation from 136 to 941 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band

 Exceptional Thermal Performance

 Extreme Ruggedness

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

Typical Applications AFT05MS004NT1

 Output Stage VHF Band Handheld Radio

 Output Stage UHF Band Handheld Radio

 Output Stage for 700–800 MHz Handheld Radio

 Driver for 10–1000 MHz Applications