深圳市中立信电子科技有限公司

NGTB40N120FL2WG

IGBT 晶体管 1200V/40A FAST IGBT Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

NGTB40N120FL2WG Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 10 s Short Circuit Capability

• These are Pb−Free Devices

NGTB40N120FL2WG Typical Applications

• Solar Inverter

• Uninterruptible Power Inverter Supplies (UPS)

• Welding

型号: NGTB40N120FL2WG

制造商: ON Semiconductor 

产品种类: IGBT 晶体管 

RoHS:  无铅环保  

技术: Si 

封装 / 箱体: TO-247 

安装风格: Through Hole 

配置: Single 

集电极—发射极电压 VCEO: 1200 V 

集电极—射极饱和电压: 2 V 

栅极/发射极电压: 30 V 

在25 C的连续集电极电流: 80 A 

Pd-功率耗散: 535 W 

工作温度: - 55 ℃ 

工作温度: + 175 ℃ 

系列: NGTB40N120FL2 

封装: Tube 

商标: ON Semiconductor  

栅极—射极漏泄电流: 200 nA  

产品类型: IGBT Transistors  

工厂包装数量: 30  

子类别: IGBTs  

单位重量: 6.500 g