深圳市中立信电子科技有限公司

NLAS5223BMNR2G

模拟开关 IC DUAL SPDT ULTRA-LOW RON S

Ultra-Low 0.35  Dual SPDT Analog Switch

The NLAS5223BMNR2G NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra−Low RON of 0.35 , at VCC = 4.3 V. The part also features guaranteed Break Before Make (BBM) switching, assuring the switches never short the driver.

NLAS5223BMNR2G Features

• Ultra−Low RON, 0.35  (typ) at VCC = 4.3 V

• NLAS5223B Interfaces with 2.8 V Chipset

• NLAS5223BL Interfaces with 1.8 V Chipset

• Single Supply Operation from 1.65−4.5 V

• Full 0−VCC Signal Handling Capability

• High Off−Channel Isolation

• Low Standby Current, 50 nA

• Low Distortion

• RON Flatness of 0.15

• High Continuous Current Capability

♦ ±320 mA Through Each Switch

• Large Current Clamping Diodes at Analog Inputs

♦ ±100 mA Continuous Current Capability

• Package:

♦ 1.4 x 1.8 x 0.75 mm WQFN10 Pb−Free

♦ 1.4 x 1.8 x 0.55 mm UQFN10 Pb−Free

• These are Pb−Free Devices

NLAS5223BMNR2G Applications

• Cell Phone Audio Block

• Speaker and Earphone Switching

• Ring−Tone Chip/Amplifier Switching

• Modems