深圳市中立信电子科技有限公司

MJ11032G

达林顿晶体管 50A 120V Bipolar Power NPN

High-Current  Complementary Silicon  Power Transistors

MJ11032G High−Current Complementary Silicon Power Transistors are for use  as output devices in complementary general purpose amplifier  applications.

MJ11032G Features

• High DC Current Gain − 

hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200C

• Pb−Free Packages are Available*

型号: MJ11032G

制造商: ON Semiconductor 

产品种类: 达林顿晶体管 

RoHS:  无铅环保  

配置: Single 

晶体管极性: NPN 

集电极—发射极电压 VCEO: 120 V 

发射极 - 基极电压 VEBO: 5 V 

集电极—基极电压 VCBO: 120 V 

直流电集电极电流: 50 A 

Pd-功率耗散: 300 W 

安装风格: Through Hole 

封装 / 箱体: TO-204-2 (TO-3) 

工作温度: - 55 ℃ 

工作温度: + 150 ℃ 

系列: MJ11032 

封装: Tray 

直流电流增益 hFE 值: 18000  

高度: 8.51 mm  

长度: 38.86 mm  

宽度: 26.67 mm  

商标: ON Semiconductor  

集电极连续电流: 50 A  

直流集电极/Base Gain hfe Min: 1000 

产品类型: Darlington Transistors  

工厂包装数量: 100  

子类别: Transistors  

单位重量: 13.835 g