深圳市中立信电子科技有限公司

ISL80112IRAJZ-T

低压差稳压器 SINGLE 2A ADJ VOUTLD 3X3 10LD W/ANNEA

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs

The ISL80112IRAJZ-T ISL80111, ISL80112, and ISL80113 are ultra low dropout  LDOs providing the optimum balance between performance, size  and power consumption in size constrained designs for data  communication, computing, storage and medical applications.  These LDOs are specified for 1A, 2A and 3A of output current and  are optimized for low voltage conversions. Operating with a VIN of  1V to 3.6V and with a legacy 2.9V to 5.5V on the BIAS, the VOUT is  adjustable from 0.8V to 3.3V. With a VIN PSRR greater than 40dB  at 100kHz makes these LDOs an ideal choice in noise sensitive  applications. The guaranteed ±1.6% VOUT accuracy overall  conditions lend these parts to supplying an accurate voltage to  the latest low voltage digital ICs.

Features ISL80112IRAJZ-T

• Ultra low dropout: 75mV at 3A, (typical)

• Excellent VIN PSRR: 70dB at 1kHz (typical)

• ±1.6% guaranteed VOUT accuracy for -40oC < TJ < +125oC

• Very fast load transient response

• Extensive protection and reporting features

• VIN range: 1V to 3.6V, VOUT range: 0.8V to 3.3V

• Small 10 Ld 3x3 DFN package

Applications ISL80112IRAJZ-T

• Noise-sensitive instrumentation and medical systems

• Data acquisition and data communication systems

• Storage, telecommunications and server equipment

• Low voltage DSP, FPGA and ASIC core power supplies

• Post-regulation of switched mode power supplies