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TK12A80W,S4X

MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W Silicon N-Channel MOS (DTMOS IV)

Applications  TK12A80W,S4X

• Switching Voltage Regulators

Features TK12A80W,S4X

(1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, I D = 0.57 mA)

Absolute Maximum Ratings (Note) (T  a = 25  ª­ unless otherwise specified)   TK12A80W,S4X

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Single-pulse avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  Isolation voltage (RMS)  Mounting torque  (T  c = 25  ª­  )  (t = 1.0 s)  (Note 1)  (Note 1)  (Note 2)  (Note 1)  (Note 1)  Symbol VDSS VGSS IDIDP PD EAS IAS IDR IDRP Tch Tstg VISO(RMS)  TOR  Rating  800 ¡À20  11.5  46  45  358  2.3  11.5  46  150  -55 to 150  2000  0.6  Unit VAW  mJAª­V  N  ª®  m

Dynamic Characteristics (T  a = 25  ª­ unless otherwise specified)  

Characteristics  Input capacitance  Reverse transfer capacitance  Output capacitance  Effective output capacitance  Gate resistance  Switching time (rise time)  Switching time (turn-on time)  Switching time (fall time)  Switching time (turn-off time)  MOSFET dv/dt ruggedness  Symbol Ciss Crss Coss Co(er) rgtr tontf toff  dv/dt  Test Condition  VDS = 300 V, VGS = 0 V, f = 1 MHz VDS = 0 to 640 V, VGS = 0 V VDS = OPEN , f = 1 MHz  See Figure 6.2.1 VDS ¡Ü V(BR)DSS, I  D  ¡Ü 11.5 A  Min ªÆªÆªÆªÆªÆªÆªÆªÆªÆ  50  Typ.  1400 3  29  35  30  40  70  11  130 ªÆ  Max ªÆªÆªÆªÆªÆªÆªÆªÆªÆªÆ  Unit  pFΩ  ns  V/ns