- 非IC关键词
深圳市中立信电子科技有限公司
- 卖家积分：
营业执照：已审核经营模式：贸易/代理/分销所在地区：广东 深圳企业网站：
http://www.zlxele.com
收藏本公司 人气：837143
企业档案
- 相关证件：
- 会员类型：
- 会员年限：16年
- 叶先生
- 电话：0755-23956688
- 手机：13410226883
- 王先生
- 电话：0755-23956688
- 阿库IM：
- 地址：深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
- 传真：0755-23956688
- E-mail：Lee@zlxele.com
TK2P90E,RQS MOSFET Toshiba
TK2P90E,RQS
TOSHIBA（东芝）
TO-252
无铅环保型
贴片式
卷带编带包装
: 2.5 V
: 30 V
: 80 W
: 12 nC
相关产品
产品信息
TK2P90E,RQS
MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A Silicon N-Channel MOS (π-MOS VIII)
Static Characteristics (Ta = 25 unless otherwise specified) TK2P90E,RQS
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.2 mA VGS = 10 V, ID = 1.0 A Min 900 2.5 Typ. 4.7 Max ±1 10 4.0 5.9 Unit μA V Ω
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TK2P90E,RQS
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 900 ±30 2 6 80 157 2 2 6 150 -55 to 150 Unit V A W mJ A
Applications TK2P90E,RQS
• Switching Voltage Regulators
Features
(1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.)
(2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
