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TK40E06N1,S1X

MOSFET 100V N-Ch PWR FET 60A 67W 23nC Silicon N-channel MOS (U-MOSªÔ-H)

ÐͺÅ: TK40E06N1,S1X 

ÖÆÔìÉÌ: Toshiba 

²úÆ·ÖÖÀà: MOSFET 

RoHS:  ÎÞǦ»·±£  

¼¼Êõ: Si 

°²×°·ç¸ñ: Through Hole 

·â×° / ÏäÌå: TO-220-3 

ͨµÀÊýÁ¿: 1 Channel 

¾§Ìå¹Ü¼«ÐÔ: N-Channel 

Vds-©Դ¼«»÷´©µçѹ: 60 V 

Id-Á¬Ðø©¼«µçÁ÷: 60 A 

Rds On-©Դµ¼Í¨µç×è: 10.4 mOhms 

Vgs - Õ¤¼«-Ô´¼«µçѹ: 10 V 

Qg-Õ¤¼«µçºÉ: 23 nC 

Pd-¹¦ÂʺÄÉ¢: 67 W 

ÅäÖÃ: Single 

¸ß¶È: 15.1 mm  

³¤¶È: 10.16 mm  

ϵÁÐ: TK40E06N1  

¾§Ìå¹ÜÀàÐÍ: 1 N-Channel  

¿í¶È: 4.45 mm  

É̱ê: Toshiba  

²úÆ·ÀàÐÍ: MOSFET  

¹¤³§°ü×°ÊýÁ¿: 50  

×ÓÀà±ð: MOSFETs  

µ¥Î»ÖØÁ¿: 6 g

Absolute Maximum Ratings (Note) (Ta = 25ª­ unless otherwise specified)  TK40E06N1,S1X

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Channel temperature  Storage temperature  (Silicon limit)  (t = 1 ms)  (Tc = 25ª­)  (Note 1), (Note 2)  (Note 1), (Note 3)  (Note 1)  (Note 4)  Symbol  VDSS  VGSS  ID  ID  IDP  PD  EAS  IAR  Tch  Tstg  Rating  60  ¡À20  60  40  125  67  40  40  150  -55 to 150  Unit  V  A  W  mJ  A  ª­

Applications TK40E06N1,S1X

• Switching Voltage Regulators

Features

(1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 ¦ÌA (max) (VDS = 60 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)