深圳市中立信电子科技有限公司

TK4A60D(STA4,Q,M)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) MOSFET  600V 2.5s IDSS 10 uA

Switching Regulator Applications TK4A60D(STA4,Q,M)

• Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 

Absolute Maximum Ratings (Ta = 25°C) TK4A60D(STA4,Q,M)

Characteristics Symbol Rating Unit  Drain-source voltage VDSS 600 V  Gate-source voltage VGSS ±30 V  DC (Note 1) ID 4  Drain current  Pulse (Note 1) IDP 16  A  Drain power dissipation (Tc = 25°C) PD 35 W  Single pulse avalanche energy   (Note 2) EAS 187 mJ  Avalanche current IAR 4 A  Repetitive avalanche energy (Note 3) EAR 3.5 mJ  Channel temperature Tch 150 °C  Storage temperature range Tstg −55 to 150 °C

型号: TK4A60D(STA4,Q,M)

制造商: Toshiba 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220FP-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 600 V 

Id-连续漏极电流: 4 A 

Rds On-漏源导通电阻: 1.7 Ohms 

配置: Single 

高度: 15 mm  

长度: 10 mm  

系列: TK4A60D  

晶体管类型: 1 N-Channel  

宽度: 4.5 mm  

商标: Toshiba  

产品类型: MOSFET  

工厂包装数量: 50  

子类别: MOSFETs