深圳市中立信电子科技有限公司

TK7A65D(STA4,Q,M)

MOSFET N-Ch MOS 7A 650V 45W 1200pF 0.98 Silicon N Channel MOS Type (π-MOSⅦ) 

Switching Regulator Applications TK7A65D(STA4,Q,M)

• Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.)

• High forward transfer admittance: |Yfs| = 4.5 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

型号: TK7A65D(STA4,Q,M)

制造商: Toshiba 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220FP-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 650 V 

Id-连续漏极电流: 7 A 

Rds On-漏源导通电阻: 980 mOhms 

Pd-功率耗散: 45 W 

配置: Single 

高度: 15 mm  

长度: 10 mm  

系列: TK7A65D  

晶体管类型: 1 N-Channel  

宽度: 4.5 mm  

商标: Toshiba  

产品类型: MOSFET  

工厂包装数量: 50  

子类别: MOSFETs  

单位重量: 6 g

Absolute Maximum Ratings (Ta = 25°C) TK7A65D(STA4,Q,M)

Characteristics Symbol Rating Unit  Drain-source voltage VDSS 650 V  Gate-source voltage VGSS ±30 V  DC (Note 1) ID 7  Drain current  Pulse (Note 1) IDP 28  A  Drain power dissipation (Tc = 25°C) PD 45 W  Single pulse avalanche energy   (Note 2) EAS 273 mJ  Avalanche current IAR 7 A  Repetitive avalanche energy (Note 3) EAR 4.5 mJ  Channel temperature Tch 150 °C  Storage temperature range Tstg −55 to 150 °C