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TK31J60W,S1VQ

MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC Silicon N-Channel MOS (DTMOS IV)

Applications  TK31J60W,S1VQ

• Switching Voltage Regulators  

Features  TK31J60W,S1VQ

(1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.)  by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching  

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)

Absolute Maximum Ratings (Note) (Ta = 25ª­ unless otherwise specified)  TK31J60W,S1VQ

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  Mounting torque  (Tc = 25ª­)  (Note 1)   (Note 1)  (Note 2)  (Note 1)   (Note 1)  Symbol  VDSS  VGSS  ID  IDP  PD  EAS  IAR  IDR  IDRP  Tch  Tstg  TOR  Rating  600  ¡À30  30.8  123  230  437  7.7  30.8  123  150  -55 to 150  0.8  Unit  V  A  W  mJ  A  ª­  Nª®m

Static Characteristics (Ta = 25ª­ unless otherwise specified)  

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  Symbol  IGSS  IDSS  V(BR)DSS  Vth  RDS(ON)  Test Condition  VGS = ¡À30 V, VDS = 0 V  VDS = 600 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  VDS = 10 V, ID = 1.5 mA  VGS = 10 V, ID = 15.4 A  Min  ªÆ  ªÆ  600  2.7  ªÆ  Typ.  ªÆ  ªÆ  ªÆ  ªÆ  0.073  Max  ¡À1  10  ªÆ  3.7  0.088  Unit  ¦ÌA  V  Ω