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TK34E10N1,S1X

MOSFET N-Ch PWR FET 75A 103W 100V VDSS Silicon N-channel MOS (U-MOSªÔ-H)

ÐͺÅ: TK34E10N1,S1X

ÖÆÔìÉÌ: Toshiba 

²úÆ·ÖÖÀà: MOSFET 

RoHS:  ÎÞǦ»·±£  

¼¼Êõ: Si 

°²×°·ç¸ñ: Through Hole 

·â×° / ÏäÌå: TO-220-3 

ͨµÀÊýÁ¿: 1 Channel 

¾§Ìå¹Ü¼«ÐÔ: N-Channel 

Vds-©Դ¼«»÷´©µçѹ: 100 V 

Id-Á¬Ðø©¼«µçÁ÷: 75 A 

Rds On-©Դµ¼Í¨µç×è: 9.5 mOhms 

Vgs - Õ¤¼«-Ô´¼«µçѹ: 10 V 

Pd-¹¦ÂʺÄÉ¢: 103 W 

ÅäÖÃ: Single 

¸ß¶È: 15.1 mm  

³¤¶È: 10.16 mm  

ϵÁÐ: TK34E10N1  

¾§Ìå¹ÜÀàÐÍ: 1 N-Channel  

¿í¶È: 4.45 mm  

É̱ê: Toshiba  

²úÆ·ÀàÐÍ: MOSFET  

¹¤³§°ü×°ÊýÁ¿: 50  

×ÓÀà±ð: MOSFETs  

µ¥Î»ÖØÁ¿: 6 g

Static Characteristics (Ta = 25ª­ unless otherwise specified) TK34E10N1,S1X

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  (Note 4)  Symbol  IGSS  IDSS  V(BR)DSS  V(BR)DSX  Vth  RDS(ON)  Test Condition  VGS = ¡À20 V, VDS = 0 V  VDS = 100 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  ID = 10 mA, VGS = -20 V  VDS = 10 V, ID = 0.5 mA  VGS = 10 V, ID = 17 A  Min  ªÆ  ªÆ  100  65  2.0  ªÆ  Typ.  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  7.9  Max  ¡À0.1  10  ªÆ  ªÆ  4.0  9.5  Unit  ¦ÌA  V  mΩ

Source-Drain Characteristics (Ta = 25ª­ unless otherwise specified)  TK34E10N1,S1X

Characteristics  Reverse drain current (DC)  Reverse drain current (pulsed)  Diode forward voltage  Reverse recovery time  Reverse recovery charge  (Note 5)   (Note 5)  (Note 6)   (Note 6)  Symbol  IDR  IDRP  VDSF  trr  Qrr  Test Condition  ªÆ  ªÆ  IDR = 34 A, VGS = 0 V  IDR = 34 A, VGS = 0 V  -dIDR/dt = 100 A/¦Ìs  Min  ªÆ  ªÆ  ªÆ  ªÆ  ªÆ  Typ.  ªÆ  ªÆ  ªÆ  61  110  Max  34  147  -1.2  ªÆ  ªÆ  Unit  A  V  ns  nC