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TK9A90E,S4X MOSFET Toshiba
TK9A90E,S4X
TOSHIBA（东芝）
TO-220SIS
无铅环保型
直插式
Through Hole
: 4 V
: 1 Ohms
: 900 V
: 30 V
相关产品
产品信息
TK9A90E,S4X
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS Silicon N-Channel MOS (π-MOS)
Dynamic Characteristics (Ta = 25 unless otherwise specified) TK9A90E,S4X
Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Ciss Crss Coss rg tr ton tf toff dv/dt Test Condition VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = OPEN, f = 1 MHz See Fig. 6.2.1. VDD = 0 to 400 V, ID = 9 A Min 20 Typ. 2000 15 150 3.5 40 80 35 140 Max Unit pF Ω ns V/ns
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TK9A90E,S4X
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR Rating 900 ±30 9 27 50 454 9 9 27 150 -55 to 150 2000 0.6 Unit V A W mJ A V Nm
Static Characteristics (Ta = 25 unless otherwise specified) TK9A90E,S4X
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.9 mA VGS = 10 V, ID = 4.5 A Min 900 2.5 Typ. 1.0 Max ±1 10 4.0 1.3 Unit μA V Ω
