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2SA1943N(S1,E,S)

Ë«¼«¾§Ìå¹Ü - Ë«¼«½áÐ;§Ìå¹Ü(BJT) POWER TRANSISTOR PC=150W; F=30MHZ

Bipolar Transistors Silicon PNP Triple-Diffused Type

Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25ª­) 2SA1943N

Characteristics  Collector-base voltage  Collector-emitter voltage  Emitter-base voltage  Collector current (DC)  Base current  Collector power dissipation  Junction temperature  Storage temperature  (Note 1)  Symbol  VCBO  VCEO  VEBO  IC  IB  PC  Tj  Tstg  Rating  -230  -230  -5  -15  -1.5  150  150  -55 to 150  Unit  V  A  W  ª­

Applications 2SA1943N

• Power Amplifiers

Features

(1) High collector voltage: VCEO = -230 V (min)

(2) Complementary to 2SC5200N

(3) Recommended for 100-W high-fidelity audio frequency amplifier output stage

ÐͺÅ: 2SA1943N

ÖÆÔìÉÌ: Toshiba 

²úÆ·ÖÖÀà: Ë«¼«¾§Ìå¹Ü - Ë«¼«½áÐ;§Ìå¹Ü(BJT) 

RoHS:  ÎÞǦ»·±£  

°²×°·ç¸ñ: Through Hole 

·â×° / ÏäÌå: TO-3P-3 

¾§Ìå¹Ü¼«ÐÔ: PNP 

ÅäÖÃ: Single 

¼¯µç¼«¡ª·¢É伫µçѹ VCEO: - 230 V 

¼¯µç¼«¡ª»ù¼«µçѹ VCBO: - 230 V 

·¢É伫 - »ù¼«µçѹ VEBO: - 5 V 

¼¯µç¼«¡ªÉ伫±¥ºÍµçѹ: - 1.1 V 

Ö±Á÷µç¼¯µç¼«µçÁ÷: - 15 A 

ÔöÒæ´ø¿í²úÆ·fT: 30 MHz 

¹¤×÷ζÈ: - 55 C 

¹¤×÷ζÈ: + 150 C 

ϵÁÐ: 2SA1943N 

Ö±Á÷µçÁ÷ÔöÒæ hFE Öµ: 160  

É̱ê: Toshiba  

¼¯µç¼«Á¬ÐøµçÁ÷: - 15 A  

Ö±Á÷¼¯µç¼«/Base Gain hfe Min: 35  

Pd-¹¦ÂʺÄÉ¢: 150 W  

²úÆ·ÀàÐÍ: BJTs - Bipolar Transistors  

¹¤³§°ü×°ÊýÁ¿: 25  

×ÓÀà±ð: Transistors  

µ¥Î»ÖØÁ¿: 7 g