深圳市中立信电子科技有限公司

2SC4738-BL

双极晶体管 - 双极结型晶体管(BJT) NPN 0.15A IC 50V Gen Purp Trans

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications 2SC4738-BL

• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)

• Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

 = 0.95 (typ.)

• High hFE: hFE = 120 to 700

• Complementary to 2SA1832

• Small package 

Absolute Maximum Ratings (Ta = 25°C)  2SC4738-BL

Characteristics Symbol Rating Unit  Collector-base voltage VCBO 60 V  Collector-emitter voltage VCEO 50 V  Emitter-base voltage VEBO 5 V  Collector current IC 150 mA  Base current IB 30 mA  Collector power dissipation PC 100 mW  Junction temperature Tj 125 °C  Storage temperature range Tstg −55 to 125 °C

Electrical Characteristics (Ta = 25°C)  2SC4738-BL

Characteristics Symbol Test Condition Min Typ. Max Unit  Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA  Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA  DC current gain hFE  (Note) VCE = 6 V, IC = 2 mA 120 ⎯ 700  Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V  Transition frequency fT VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz  Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF