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TBC857B,LM

Ë«¼«¾§Ìå¹Ü - Ë«¼«½áÐ;§Ìå¹Ü(BJT) BJT PNP -0.15A -50V

Absolute Maximum Ratings (Note) (Unless otherwise specified, T  a = 25  ª­  )  TBC857B,LM

Characteristics  Collector-base voltage  Collector-emitter voltage  Emitter-base voltage  Collector current (DC)  Collector current (pulsed)  Base current  Collector power dissipation  Junction temperature  Storage temperature  (Note 1)  Symbol VCBO VCEO VEBO ICICPIBPCTj Tstg  Rating  -50  -50  -5  -150  -200  -30  320  150  -55 to 150  Unit VVV  mA  mA  mWª­ª­

ÐͺÅ: TBC857B,LM

ÖÆÔìÉÌ: Toshiba 

²úÆ·ÖÖÀà: Ë«¼«¾§Ìå¹Ü - Ë«¼«½áÐ;§Ìå¹Ü(BJT) 

RoHS:  ÎÞǦ»·±£  

¼¼Êõ: Si 

°²×°·ç¸ñ: SMD/SMT 

·â×° / ÏäÌå: SOT-23-3 

¾§Ìå¹Ü¼«ÐÔ: PNP 

ÅäÖÃ: Single 

¼¯µç¼«¡ª·¢É伫µçѹ VCEO: - 50 V 

¼¯µç¼«¡ª»ù¼«µçѹ VCBO: - 50 V 

·¢É伫 - »ù¼«µçѹ VEBO: - 5 V 

¼¯µç¼«¡ªÉ伫±¥ºÍµçѹ: - 220 mV 

Ö±Á÷µç¼¯µç¼«µçÁ÷: - 150 mA 

ÔöÒæ´ø¿í²úÆ·fT: 80 MHz 

¹¤×÷ζÈ: + 150 C 

ϵÁÐ: TBC8X7 

·â×°: Cut Tape  

·â×°: Reel  

É̱ê: Toshiba  

¼¯µç¼«Á¬ÐøµçÁ÷: - 150 mA  

Pd-¹¦ÂʺÄÉ¢: 320 mW  

²úÆ·ÀàÐÍ: BJTs - Bipolar Transistors  

¹¤³§°ü×°ÊýÁ¿: 3000  

×ÓÀà±ð: Transistors  

µ¥Î»ÖØÁ¿: 8 mg

Applications TBC857B,LM

• Low-Frequency Amplifiers