深圳市中立信电子科技有限公司

TTC5200(Q)

双极晶体管 - 双极结型晶体管(BJT) NPN PWR Amp Trans 15A 150W 230V

TOSHIBA Transistor Silicon NPN Triple Diffused Type

○ Power Amplifier Applications TTC5200(Q)

• High collector voltage: VCEO = 230 V (min)

• Complementary to TTA1943

• Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Absolute Maximum Ratings (Ta = 25°C) TTC5200(Q)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 230 V

Collector-emitter voltage VCEO 230 V

Emitter-base voltage VEBO 5 V

Collector current IC 15 A

Base current IB 1.5 A

Collector power dissipation (Tc=25°C) PC 150 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Electrical Characteristics (Ta = 25°C) TTC5200(Q)

Characteristics Symbol Test Condition Min Typ Max Unit

Collector cut-off current ICBO VCB = 230V, IE = 0 ― ― 5.0 μA

Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 μA

Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ― ― V

hFE (1) VCE = 5 V, IC = 1 A 80 ― 160

DC current gain

hFE (2) VCE = 5 V, IC = 7 A 35 ― ―

Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A ― ― 3.0 V

Base-emitter voltage VBE VCE = 5 V, IC = 7 A ― ― 1.5 V

Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz

Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 145 ― pF