深圳市中立信电子科技有限公司

TMBT3906,LM

双极晶体管 - 双极结型晶体管(BJT) Transistor for Low Freq. Amplification

Absolute Maximum Ratings (Ta = 25°C) TMBT3906

Characteristics Symbol Rating Unit  Collector-base voltage VCBO −50 V  Collector-emitter voltage VCEO −50 V  Emitter-base voltage VEBO −5 V  Collector current IC −200 mA  Base current IB −30 mA  Collector power dissipation  PC (Note 1) 320 mW  PC (Note 2) 1000 mW  Junction temperature Tj 150 °C  Storage temperature range Tstg −55 to 150 °C

Audio Frequency General Purpose Amplifier Applications TMBT3906

 High voltage and high current

 : VCEO = −50 V, IC = −200 mA (max)

 Complementary to TMBT3904 

Electrical Characteristics (Ta = 25°C) TMBT3906  

Characteristics Symbol Test Condition Min Typ. Max Unit  Collector cut-off current ICBO VCB = −50 V, IE = 0 mA ― ― −0.1 μA  Emitter cut-off current IEBO VEB = −5 V, IC = 0 mA ― ― −0.1 μA  DC current gain hFE  VCE = −1 V, IC = −0.1 mA 60 ― ―  ―  VCE = −1 V, IC = −1 mA 80 ― ―  VCE = −1 V, IC = −10 mA 100 ― 300  VCE = −1 V, IC = −50 mA 60 ― ―  VCE = −1 V, IC = −100 mA 30 ― ―  Collector-emitter saturation voltage VCE (sat)  IC = −10 mA, IB = −1 mA ― ― −0.25  V  IC = −50 mA, IB = −5 mA ― ― −0.40  Base-emitter saturation voltage VBE (sat)  IC = −10 mA, IB = −1 mA ― ― −0.85  V  IC = −50 mA, IB = −5 mA ― ― −0.95  Transition frequency fT VCE = −20 V, IC = −10 mA 250 ― ― MHz  Collector output capacitance Cob VCB = −10 V, IE = 0 mA, f = 1 MHz ― 4 7 pF  Noise figure NF VCE = −5 V, IC = −0.1 mA,  f = 1 kHz, Rg = 1 kΩ, ― ― 4 dB  Switching times  delay time td ― ― 35  ns  rise time tr ― ― 35  storage time ts ― ― 200  fall time tf ― ― 50