深圳市中立信电子科技有限公司

DTC123EKAT146

NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistors

双极晶体管 - 预偏置 DIGIT NPN 50V 100MA

Features DTC123EKAT146

1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit) .

3) Only the on/off conditions need to be set

for operation, making the circuit design easy.

4) Complementary PNP Types: DTA123E series

Application DTC123EKAT146

INVERTER, INTERFACE, DRIVER

Inner circuit

DTC123EM/ DTC123EEB/ DTC123EUB

Electrical characteristics (Ta = 25°C) DTC123EKAT146

Parameter Symbol Conditions  Values  Unit  Min. Typ. Max.  Input voltage  VI(off) VCC = 5V, IO = 100μA - - 0.5  V  VI(on) VO = 0.3V, IO = 20mA 3.0 - -  Output voltage VO(on) IO = 10mA, II = 0.5mA - 100 300 mV  Input current II VI = 5V - - 3.8 mA  Output current IO(off) VCC = 50V, VI = 0V - - 500 nA  DC current gain GI VO = 5V, IO = 20mA 20 - - -  Input resistance R1 - 1.54 2.2 2.86 kΩ  Resistance ratio R2  /R1 - 0.8 1 1.2 -  Transition frequency fT  *1 VCE = 10V, IE = -5mA,  f = 100MHz  - 250 - MHz

Absolute maximum ratings (Ta = 25°C)  

Parameter Symbol Values Unit  Supply voltage VCC 50 V  Input voltage VIN -10 to 12 V  Output current IO 100 mA  Collector current IC(MAX)  *1 100 mA  Power dissipation  DTC123EM  PD  *2  150  mW  DTC123EEB 150  DTC123EE 150  DTC123EUB 200  DTC123EUA 200  DTC123EKA 200  Junction temperature Tj 150 ℃  Range of storage temperature Tstg -55 to +150 ℃