深圳市中立信电子科技有限公司

D44H11

双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur Switch Complementary power transistors

Features D44H11

■ Low collector-emitter saturation voltage 

■ Fast switching speed 

Applications D44H11

■ Power amplifier 

■ Switching circuits 

Description

The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications.

Absolute maximum ratings  

Symbol Parameter Value Unit  VCEO  Collector-emitter voltage (IB = 0) D44H8 - D45H8 60 V  Collector-emitter voltage (IB = 0) D44H11 - D45H11 80 V  VEBO Emitter-base voltage (IC = 0) 5 V  IC Collector current 10 A  ICM Collector peak current 20 A  PTOT Total dissipation at Tcase = 25 °C 50 W  TSTG Storage temperature -55 to 150 °C  TJ Max. operating junction temperature 150 °C

型号: D44H11 

制造商: STMicroelectronics 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

晶体管极性: NPN 

配置: Single 

集电极—发射极电压 VCEO: 80 V 

集电极—基极电压 VCBO: 80 V 

发射极 - 基极电压 VEBO: 5 V 

集电极—射极饱和电压: 1 V 

直流电集电极电流: 20 A 

工作温度: - 65 C 

工作温度: + 150 C 

系列: D44H11 

高度: 9.15 mm (Max)  

长度: 10.4 mm (Max)  

宽度: 4.6 mm (Max)  

商标: STMicroelectronics  

集电极连续电流: 10 A  

直流集电极/Base Gain hfe Min: 60  

Pd-功率耗散: 50 W  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 1000  

子类别: Transistors  

单位重量: 6 g