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L6384ED 电源芯片 门驱动器
L6384ED
ST(意法半导体)
: 25 mA
: 15.6 V
: - 45 C
: + 125 C
相关产品
产品信息
L6384ED
门驱动器 High voltage half-bridge driver
Description
The L6384ED L6384E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to single input configuration. Further prevention from outputs cross conduction is guaranteed by the deadtime function, tunable by the user through an external resistor connected to the DT/SD pin.
Features L6384ED
High voltage rail up to 600 V
dV/dt immunity ± 50 V/nsec in full temperature range
Driver current capability
– 400 mA source
– 650 mA sink
Switching times 50/30 nsec rise/fall with 1 nF load
CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
Shutdown input
Deadtime setting
Undervoltage lockout
Integrated bootstrap diode
Clamping on VCC
Available in DIP-8/SO-8 packages
Applications L6384ED
Home appliances
Induction heating
HVAC
Industrial applications and drives
Motor drivers
– DC, AC, PMDC and PMAC motors
Lighting applications
Factory automation
Power supply systems