深圳市中立信电子科技有限公司

STF7LN80K5

MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package

Description STF7LN80K5

This very high voltage N-channel Power  MOSFET is designed using MDmesh™ K5  technology based on an innovative proprietary  vertical structure. The result is a dramatic  reduction in on-resistance and ultra-low gate  charge for applications requiring superior power  density and high efficiency.

Applications

• Switching applications

Features

• Industry’s lowest RDS(on) x area

• Industry’s best figure of merit (FoM)

• Ultra-low gate charge

• 100% avalanche tested

• Zener-protected

型号: STF7LN80K5

制造商: STMicroelectronics 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220FP-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 800 V 

Id-连续漏极电流: 5 A 

Rds On-漏源导通电阻: 1.15 Ohms 

Vgs th-栅源极阈值电压: 3 V 

Vgs - 栅极-源极电压: 30 V 

Qg-栅极电荷: 12 nC 

工作温度: - 55 C 

工作温度: + 150 C 

Pd-功率耗散: 25 W 

配置: Single 

通道模式: Enhancement 

商标名: MDmesh 

系列: STF7LN80K5  

晶体管类型: 1 N-Channel  

商标: STMicroelectronics  

下降时间: 17.4 ns  

产品类型: MOSFET  

上升时间: 6.7 ns  

工厂包装数量: 50  

子类别: MOSFETs  

典型关闭延迟时间: 23.6 ns  

典型接通延迟时间: 9.3 ns