深圳市中立信电子科技有限公司

STP60NF10

N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK  STripFET™ II Power MOSFET

MOSFET N-Ch 100 Volt 80 Amp

General features

■ Exceptional dv/dt capability

■ 100% avalanche tested

Description STP60NF10

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

Applications

■ Switching application

型号: STP60NF10

制造商: STMicroelectronics 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 100 V 

Id-连续漏极电流: 80 A 

Rds On-漏源导通电阻: 23 mOhms 

Vgs - 栅极-源极电压: 20 V 

工作温度: - 55 C 

工作温度: + 175 C 

Pd-功率耗散: 300 W 

配置: Single 

通道模式: Enhancement 

商标名: STripFET 

封装: Tube 

高度: 9.15 mm  

长度: 10.4 mm  

系列: STP60NF10  

晶体管类型: 1 N-Channel  

类型: MOSFET  

宽度: 4.6 mm  

商标: STMicroelectronics  

正向跨导 - 值: 78 S  

下降时间: 23 ns  

产品类型: MOSFET  

上升时间: 56 ns  

工厂包装数量: 50  

子类别: MOSFETs  

典型关闭延迟时间: 82 ns  

典型接通延迟时间: 17 ns  

单位重量: 1.438 g