深圳市中立信电子科技有限公司

TIP122

达林顿晶体管 NPN Complementary Power Darlington transistors

Features 

■ Low collector-emitter saturation voltage 

■ Complementary NPN - PNP transistors 

Applications 

■ General purpose linear and switching 

Description 

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

型号: TIP122 

制造商: STMicroelectronics 

产品种类: 达林顿晶体管 

RoHS:  无铅环保  

配置: Single 

晶体管极性: NPN 

集电极—发射极电压 VCEO: 100 V 

发射极 - 基极电压 VEBO: 5 V 

集电极—基极电压 VCBO: 100 V 

直流电集电极电流: 5 A 

集电极截止电流: 200 uA 

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

工作温度: + 150 C 

系列: TIP122 

高度: 9.15 mm  

长度: 10.4 mm  

宽度: 4.6 mm  

商标: STMicroelectronics  

直流集电极/Base Gain hfe Min: 1000  

产品类型: Darlington Transistors  

工厂包装数量: 1000  

子类别: Transistors  

单位重量: 6 g 

Symbol Parameter Value Unit  NPN TIP120 TIP121 TIP122  PNP TIP125 TIP126 TIP127  VCBO Collector-base voltage (IE = 0) 60 80 100 V  VCEO Collector-emitter voltage (IB = 0) 60 80 100 V  VEBO Emitter-base voltage (IC = 0) 5 V  IC Collector current 5 A  ICM Collector peak current 8 A  IB Base current 0.12 A  PTOT  Total dissipation at Tc ≤ 25 °C   Tamb ≤ 25 °C  65  2  W  Tstg Storage temperature -65 to 150 °C  TJ Max. operating junction temperature 150