深圳市中立信电子科技有限公司

DTC043EEBTL

双极晶体管 - 预偏置 NPN Digital Transtr w/built in resistors

NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

Features DTC043EEBTL

1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit) .

3) Only the on/off conditions need to be set

for operation, making the circuit design easy.

4) Complementary PNP Types: DTA043E series

Application

INVERTER, INTERFACE, DRIVER

Absolute maximum ratings (Ta = 25°C) DTC043EEBTL

Parameter Symbol Values Unit  Supply voltage VCC 50 V  Input voltage VIN 30 to -10 V  Output current IO 100 mA  Collector current IC(MAX)  *1 100 mA  Power dissipation  DTC043EM  PD  *2  150  DTC043EEB 150 mW  DTC043EUB 200  Junction temperature Tj 150 ℃  Range of storage temperature Tstg -55 to +150 ℃

Electrical characteristics (Ta = 25°C)  DTC043EEBTL

Parameter Symbol Conditions  Values  Unit  Min. Typ. Max.  Input voltage  VI(off) VCC = 5V, IO = 100μA - - 0.5  V  VI(on) VO = 0.3V, IO = 5mA 2.2 - -  Output voltage VO(on) IO = 5mA, II = 0.5mA - 50 150 mV  Input current II VI = 5V - - 1.8 mA  Output current IO(off) VCC = 50V, VI = 0V - - 500 nA  DC current gain GI VO = 10V, IO = 5mA 20 - - -  Input resistance R1 - 3.29 4.7 6.11 kΩ  Resistance ratio R2  /R1 - 0.8 1.0 1.2 -  Transition frequency fT  *1 VCE = 10V, IE = -5mA,  f = 100MHz  - 250 - MHz