深圳市中立信电子科技有限公司

PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

• Built in bias resistor (R1 = 10 kΩ , R2 = 10 kΩ)

• BCR183S / U: Two internally isolated

transistors with good matching

in one multichip package

• BCR183S / U: For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCEO 50 V

Collector-base voltage VCBO 50

Input forward voltage Vi(fwd) 40

Input reverse voltage Vi(rev) 10

Collector current IC 100 mA

Total power dissipationBCR183,

TS ≤ 102°C

BCR183S, TS ≤ 115°C

BCR183U, TS ≤ 118°C

BCR183W, TS ≤ 124°C

Junction temperature Tj 150 °C

Storage temperature Tstg -65 ... 150

制造商: Infineon 

产品种类: 双极晶体管 - 预偏置 

配置: Single 

晶体管极性: PNP 

典型输入电阻器: 10 kOhms 

典型电阻器比率: 1 

安装风格: SMD/SMT 

封装 / 箱体: SOT-23-3 

直流集电极/Base Gain hfe Min: 30 

集电极—发射极电压 VCEO: 50 V 

集电极连续电流: 100 mA 

峰值直流集电极电流: 100 mA 

Pd-功率耗散: 200 mW 

工作温度: + 150 C 

集电极—基极电压 VCBO: 50 V  

直流电流增益 hFE 值: 30  

发射极 - 基极电压 VEBO: 10 V  

高度: 1 mm  

长度: 2.9 mm  

类型: Digital Transistors  

宽度: 1.3 mm  

商标: Infineon Technologies  

产品类型: BJTs - Bipolar Transistors - Pre-Biased  

资格: AEC-Q101  

子类别: Transistors  

单位重量: 1.438 g