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93LC86CT-I/SN 电可擦除可编程只读存储器
: EEPROM
: 100 ns
: 200 Year
: 2 MHz
: - 40 C
: + 85 C
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93LC86CT-I/SN
电可擦除可编程只读存储器 1024x16-2048x8 2.5V IND TEMP, SOIC8
16K Microwire Compatible Serial EEPROM
Description 93LC86CT-I/SN
The Microchip Technology Inc. 93XX86A/B/C devices are 16K bit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93XX86C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit communication, the 93XX86A devices are available, while the 93XX86B devices provide dedicated 16-bit communication, available on SOT-23 devices only. A Program Enable (PE) pin allows the user to write-protect the entire memory array. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile memory applications. The entire 93XX Series is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead MSOP, 6-lead SOT-23, and 8-lead TSSOP. Pb-free (Pure Matte Sn) finish is also available.
Absolute Maximum Ratings (†) 93LC86CT-I/SN
VCC..........................................7.0V
All inputs and outputs w.r.t. VSS .................................... -0.6V to VCC +1.0V
Storage temperature .........................................-65°C to +150°C
Ambient temperature with power applied....................................-40°C to +125°C
ESD protection on all pins .......................................≥ 4 kV
Features 93LC86CT-I/SN
• Low-power CMOS technology
• ORG pin to select word size for ‘86C’ version
• 2048 x 8-bit organization ‘A’ devices (no ORG)
• 1024 x 16-bit organization ‘B’ devices (no ORG)
• Program Enable pin to write-protect the entire array
• Self-timed ERASE/WRITE cycles (including auto-erase)
• Automatic ERAL before WRAL
• Power-on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device Status signal (READY/BUSY)
• Sequential READ function
• 1,000,000 E/W cycles
• Data retention > 200 years
• Temperature ranges supported:
- Industrial (I) -40°C to +85°C
- Automotive (E) -40°C to +125°C