深圳市中立信电子科技有限公司

16年

深圳市中立信电子科技有限公司

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24FC512-I/P 电可擦除可编程只读存储器
24FC512-I/P 电可擦除可编程只读存储器
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24FC512-I/P 电可擦除可编程只读存储器

产品类型:

: EEPROM

工作电源电流:

: 5 mA

工作电源电压:

: 2.5 V

数据保留:

: 200 Year

工作温度:

: - 40 C

工作温度:

: + 85 C

产品信息

24FC512-I/P

电可擦除可编程只读存储器 64kx8 - 2.5V Hi Spd

512K I2C™ Serial EEPROM


Description 24FC512-I/P

The Microchip Technology Inc. 24FC512-I/P 24AA512/24LC512/ 24FC512 (24XX512*) is a 64K x 8 (512 Kbit) Serial Electrically Erasable PROM, capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications and data acquisition. This device also has a page write capability of up to 128 bytes of data. This device is capable of both random and sequential reads up to the 512K boundary. Functional address lines allow up to eight devices on the same bus, for up to 4 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIJ, SOIC, TSSOP, DFN, and 14-lead TSSOP packages. The 24AA512 is also available in the 8-lead Chip Scale package.


Features 24FC512-I/P

• Single Supply with Operation down to 1.7V for

24AA512 and 24FC512 Devices, 2.5V for

24LC512 Devices

• Low-Power CMOS Technology:

- Active current 400 uA, typical

- Standby current 100 nA, typical

• 2-Wire Serial Interface, I2C™ Compatible

• Cascadable for up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 5 ms max.

• Self-Timed Erase/Write Cycle

• 128-Byte Page Write Buffer

• Hardware Write-Protect

• ESD Protection >4000V

• More than 1 Million Erase/Write Cycles

• Data Retention > 200 years

• Packages Include 8-lead PDIP, SOIJ, SOIC,

TSSOP, DFN, Chip Scale and 14-lead TSSOP

• Pb-Free and RoHS Compliant

• Temperature Ranges:

- Industrial (I): -40C to +85C

- Automotive (E):-40C to +125C