深圳市中立信电子科技有限公司

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深圳市中立信电子科技有限公司

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24LC08BT-E/MNY 电可擦除可编程只读存储器
24LC08BT-E/MNY 电可擦除可编程只读存储器
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24LC08BT-E/MNY 电可擦除可编程只读存储器

存储容量:

: 8 kbit

访问时间:

: 900 ns

数据保留:

: 200 Year

时钟频率:

: 400 kHz

工作温度:

: - 40 C

工作温度:

: + 125 C

产品信息

24LC08BT-E/MNY

电可擦除可编程只读存储器 8K 1K X 8 2.5V SERIAL EE EXT

8K I2C™ Serial EEPROM


Description 24LC08BT-E/MNY

The Microchip Technology Inc. 24LC08BT-E/MNY 24AA08/24LC08B (24XX08*) is a 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of only 1 μA and 1 mA, respectively. The 24XX08 also has a page write capability for up to 16 bytes of data. The 24XX08 is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, 2x3 DFN, 2x3 TDFN and MSOP packages, and is also available in the 5-lead SOT-23 package. All packages are Pb-free and RoHS compliant.


Features 24LC08BT-E/MNY

• Single Supply with Operation Down to 1.7V for

24AA08 Devices, 2.5V for 24LC08B Devices

• Low-Power CMOS Technology:

- Read current 1 mA, max.

- Standby current 1 μA, max

• 2-Wire Serial Interface, I2C™ Compatible

• Schmitt Trigger inputs for Noise Suppression

• Output Slope Control to eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 3 ms, typical

• Self-Timed Erase/Write Cycle

• 16-Byte Page Write Buffer

• Hardware Write-Protect

• ESD Protection >4,000V

• More than 1 Million Erase/Write Cycles

• Data Retention >200 years

• Factory Programming Available

• Packages include 8-lead PDIP, SOIC, TSSOP,

DFN, TDFN, MSOP and 5-lead SOT-23

• Pb-free and RoHS Compliant

• Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C