深圳市中立信电子科技有限公司

16年

深圳市中立信电子科技有限公司

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24LC512T-I/SN 电可擦除可编程只读存储器
24LC512T-I/SN 电可擦除可编程只读存储器
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24LC512T-I/SN 电可擦除可编程只读存储器

产品类型:

: EEPROM

访问时间:

: 900 ns

数据保留:

: 200 Year

工作电源电压:

: 2.5 V to 5.5 V

工作电源电流:

: 5 mA

时钟频率:

: 1 MHz

产品信息

24LC512T-I/SN

电可擦除可编程只读存储器 512K 64K X 8 2.5V SER EE IND

512K I2C™ Serial EEPROM


Description: 24LC512T-I/SN

The Microchip Technology Inc. 24AA512/24LC512/

24FC512 (24XX512*) is a 64K x 8 (512 Kbit) Serial

Electrically Erasable PROM, capable of operation

across a broad voltage range (1.7V to 5.5V). It has

been developed for advanced, low-power applications

such as personal communications and data acquisition.

This device also has a page write capability of up

to 128 bytes of data. This device is capable of both

random and sequential reads up to the 512K boundary.

Functional address lines allow up to eight devices on

the same bus, for up to 4 Mbit address space. This

device is available in the standard 8-pin plastic DIP,

SOIJ, SOIC, TSSOP, DFN, and 14-lead TSSOP

packages. The 24AA512 is also available in the 8-lead

Chip Scale package.

Features: 24LC512T-I/SN

• Single Supply with Operation down to 1.7V for 24LC512T-I/SN

24AA512 and 24FC512 Devices, 2.5V for

24LC512 Devices

• Low-Power CMOS Technology:

- Active current 400 uA, typical

- Standby current 100 nA, typical

• 2-Wire Serial Interface, I2C™ Compatible

• Cascadable for up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 5 ms max.

• Self-Timed Erase/Write Cycle

• 128-Byte Page Write Buffer

• Hardware Write-Protect

• ESD Protection >4000V

• More than 1 Million Erase/Write Cycles