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VOM617A-8X001T 晶体管输出光电耦合器
VOM617A-8X001T
Vishay
: 1 Channel
: 3750 Vrms
: 1.6 V
: 170 mW
相关产品
产品信息
VOM617A-8X001T
晶体管输出光电耦合器 Phototransistor Out CTR 130-260% 5mA VDE
Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package
FEATURES VOM617A-8X001T
• Operating temperature from - 55 °C to + 110 °C
• SOP-4 mini-flat package
• Isolation test voltage, 3750 VRMS
• Low saturation voltage
• Fast switching times
• Low coupling capacitance
• End-stackable, 0.100" (2.54 mm) spacing
• CTR range 40 % to 600 %, IF = 5 mA
APPLICATIONS VOM617A-8X001T
• PLCs
• Telecommunication
• Lighting control system
• Solar inverters
• AC drives
DESCRIPTION VOM617A-8X001T
The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
These coupling devices are designed for signal transmission between two electrically separated circuits.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current IF 60 mA
Reverse voltage VR 6 V
Power dissipation Pdiss 70 mW
Surge forward current tp ≤ 10 μs IFSM 2.5 A
