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MJ11033G 达林顿晶体管 ON
MJ11033G
ON(安森美)
TO-204-2
无铅环保型
直插式
单件包装
PNP型
300 W
50 A
- 55 ℃
150 ℃
产品信息
MJ11033G
达林顿晶体管 50A 120V Bipolar Power PNP
High-Current Complementary Silicon Power Transistors
MJ11033G High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.
MJ11033G There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
MJ11033G Features
• High DC Current Gain −
hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200C
• Pb−Free Packages are Available*